Materials Science and Advanced Applications of Wire Bonding in Microelectronics Packaging: From Fine-Pitch Interconnects to Next-Generation Reliability

Introduction

Wire bonding remains the most widely deployed first-level interconnect technology in microelectronics packaging, valued for its reliability, cost-effectiveness, and versatility. Continuous innovations in bonding wire materials, process technologies, encapsulation chemistries, and equipment intelligence have expanded its role in advanced applications such as power electronics, automotive, MEMS/sensors, photonics, biomedical devices, and heterogeneous System-in-Package (SiP) integration. Despite the rise of flip-chip and hybrid bonding for high-bandwidth memory, wire bonding continues to dominate in cost-sensitive, high-reliability, and high-power applications.

List of topic areas

• Theme A — Bonding Wire Materials & Metallurgy Focuses on Au, Cu, Ag, Pd/Au-coated Cu, and recycled Au bonding wires, including alloying, EBSD texture, drawing/annealing effects, bondability, and reliability.
• Theme B — Intermetallic Compounds (IMC) & Interfacial Reactions Covers Au-Al, Cu-Al, and Ag-Al IMC formation, growth kinetics, phase evolution, Kirkendall voiding, oxidation, diffusion modeling, and bond-pad metallization effects.
• Theme C — Process Technology & Equipment Addresses thermosonic bonding process optimization, free-air-ball control, fine-pitch bonding below 30 µm, low-loop structures, and stand-off stitch bonding for advanced packages.
• Theme D — Encapsulation, EMC & Environmental Interactions Examines EMC/DAF chemistry, ion-catcher systems, moisture-bias effects, halide mobility, Cu corrosion, wire sweep, loop stability, and bond integrity.
• Theme E — Reliability & Failure Analysis Focuses on wire-bond reliability under HTSL, uHAST, TCT, PCT, drop, and shock, including stitch lift, heel cracking, IMC fracture, and advanced FA methods.
• Theme F — Advanced Applications Highlights wire-bonding applications in power, automotive, MEMS, sensors, photonics, biomedical devices, heterogeneous SiP, chiplets, and SiC/GaN heavy-ribbon modules.
• Theme G — Hybrid Wire-Bonding Technologies & AI-Assisted Bonding Addresses hybrid wire-bond integration with advanced interconnects and intelligent automation in next-generation bonder platforms. G1. Hybrid Wire-Bond + Flip-chip Advanced Packaging Covers wire bonds coexisting with Cu-posts/Cu-pillars, including process windows, stress interactions, EMC flow, mixed-interconnect reliability, and pad/RDL design. G2. Hybrid Wire-Bond + Flip-Chip for System-in-Package (SiP) Applications Addresses mixed flip-chip and wire-bond SiP modules, stacked-die integration, underfill interactions, warpage, substrate co-design, interposers, and chiplet routing. G3. AI / ML-Assisted Wire Bonding Explores AI/ML for loop optimization, reference-point detection, adaptive calibration, predictive control, AOI defect classification, bonder digital twins, and recipe generation.

Submissions Information

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Key deadlines

Opening date for manuscripts submissions: 03/08/2026

Closing date for manuscripts submission: 31/03/2027

Closing date for abstract submission: 28/02/2027